We are developing inverters using SiC (silicon carbide) as the next generation of power semiconductor materials, and are the first company in the world to successfully use them to drive the 3.7 kilowatt high-output motor, which is widely used for industrial and other applications.

Compared to conventional semiconductors, SiC is able to withstand high temperatures and high voltage, realizing power devices with superb performance.

Through the development of SiC devices' design and processing technology, we have developed a world-class low-loss power MOSFET.

Using a SiC-MOSFET inverter, Mitsubishi Electric has succeeded in the world's first demonstration of 3.7 kilowatt motor drive, which features 50% less power loss compared to conventional technology.

Compared to conventional technology, SiC devices provide lower power loss and higher operating temperature, which contributes to miniaturization, as well as high performance and low power consumption of power electronics machines.