Mitsubishi Electric to Start Sample Shipments of 8M-bit DINOR Flash Memories, Jointly Developed by Mitsubishi Electric and Hitachi

-- 80ns at 3.3V: Highest Speed, Ideal for Mobile Phones --

Tokyo, September 2, 1996 -- Mitsubishi Electric Corporation has completed joint development with Hitachi, Ltd., of 8M-bit DINOR flash memories, and will start shipping samples under the product names "M5M29FB800" and "M5M29FT800," beginning September 17, 1996.

The DINOR flash memories apply a new concept combining the features of NOR- and NAND-type. The 8M-bit DINOR flash memories developed using this technology feature large capacity, high-speed access, low voltage and operation using a single power supply*. Through these features, DINOR flash memories are ideal for use in mobile phones and other portable information equipment, whose market is rapidly expanding.

In November 1995, Mitsubishi Electric launched its 16-Mbit DINOR flash memories and will expand its line-up of DINOR flash memories with these 8M-bit chips. Using the 0.5m process, Mitsubishi Electric's Saijo Factory will concentrate on the production of flash memories. Mitsubishi Electric schedules to produce one million chips a month, in the second quarter of 1997.

*A single power supply: Convenient for battery-operated portable equipment. A converter is needed with flash memories, which require two power supplies, 5 and 12V, to boost the voltage to 12V.

Background of Development:

To date, portable telephones have been enjoying an unprecedented boom, due to expanded service areas with the rapid building of infrastructure, low usage charges and inexpensive handsets.

Demand for large-capacity flash memories is increasing substantially for mobile phones. Data can be rewritten electrically in flash memories in batches or in block units. Data stored in these memories are not erased when the power is turned off. As non-volatile semiconductor memories, flash memories are used as memories for storing system programs of portable phones.

Responding to these market trends, Mitsubishi Electric has developed an 8M-bit flash memory featuring a 3.3V single power supply and high-speed access, using the DINOR memory cell also developed by the company.

In addition to mobile phones, demand for these flash memories is expected to expand for use in application fields such as portable information equipment and network equipment, which are expected to appear in the market. Mitsubishi Electric will continue its efforts to lower system voltage to further lengthen battery life span.

Product Features:

1. Highest Speed in Industry (80ns)

The DINOR memory cell structure is a new memory cell developed by Mitsubishi Electric. It combines the features of the two memory types; high speed of NOR type and high integration of NAND-type. Power consumption can be reduced with low-voltage operation. High-speed random access* of 80ns ( maximum) operating on single power supply at a low voltage of 3.3V has been achieved, using this DINOR memory cell. 80ns is the highest speed in the industry, which has for the first time accomplished a figure less than 100ns.

*High-speed random access: A powerful weapon for program memories because data can be read at any place at a high speed.

2. Automatic Page Writing, Automatic Block Erase and Various Other User-Convenience Functions Integrated on a Chip

The new products incorporate on a chip various functions which are convenient to users. These functions include automatic page writing to automate complex algorithms for writing and erasing simply by inputting a command, automatic block erase, erase interrupt/resume, write interrupt/ resume, and rewrite inhibit, which can be set for each block. These functions allow for easy system software development.

Sample Shipments Schedule:

TSOP (Thin Small Outline Package) Sept. 17, 1996

*Samples of SOP (small outline package) products will be available for shipment thereafter.

Scheduled Production Quantity:

Production starts initially at a rate of 200,000 chips a month.

Sample Price:

TSOP/SOP 3,000 yen a sample

Main Specification:

Word Organization: 524,288 words x 16bits/ 1,048,576 words x 8bits

Power Supply Voltage: Vcc = 3.3V +/-0.3V single power supply

Access Time: 80/100/120ns (maximum)

Power Consumption
During read: 108mW (maximum)
During write/erase: 144mW (maximum)
During standby: 0.72mW (maximum)
During deep power outage: 3.3W (standard)

Auto Programming: 25ms (standard)/128 words

Auto Erase: 50ms (standard)/block

Boot block: 8Kwords/16Kbytes x1

Parameter block: 4Kwords/8Kbytes x2

Main block : 16Kwords/32Kbytes x1, 32Kwords/64Kbytes x15

Package: 48pin TSOP(Type 1)/44-pin SOP

Interchangeability: Completely interchangeable with Hitachi products (HN29WB/T800)

Future Plans of Mitsubishi Electric:

Support of versions guaranteed to operate in a wide temperature range and at a lower voltage which are strongly demanded for portable applications including portable phones.

*1 Estimated by Mitsubishi Electric in conditions of the same design rule.
*2 The figure from Intel Smarl Voltage.