Mitsubishi Electric's 0.15µmm, 256-Mbit DDR and SDR SDRAMs
Fit in Ultra-Compact sTSOP Package

SUNNYVALE, Calif.--August 28, 2001 -- The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today announced the sample availability of 0.15µmm, second-generation, 256-Mbit double-data-rate (DDR) and single-data-rate (SDR) synchronous DRAMs (SDRAMs) for high-end server and workstation, networking and communications, and notebook and desktop computer applications. A leading-edge 0.15µmm CMOS process technology enables the 256-Mbit devices to fit in an ultra-compact small TSOP (sTSOP) package as well as a standard TSOP Type II package. With a mounting area of only 140 square millimeters, the sTSOP package occupies about 50 percent of the PC board space required by a standard TSOP package. DDR266 and DDR200 speed grades are available for the DDR devices, with PC166 and PC133 available for the SDR devices.

“Mitsubishi Electric's leading-edge 0.15µmm CMOS process technology makes it possible for us to put a 256-Mbit device into our innovative and compact sTSOP package,”said Cecil Conkle, assistant vice president of DRAM marketing at Mitsubishi Electric & Electronics USA, Inc. “In addition, our leadership in manufacturing both DDR and SDR SDRAMs on the same die shows our commitment to increasing the flexibility of our products as well as reducing and simplifying their manufacturing costs. This ultimately improves the availability of both device types to our customers.”

With the availability of the sTSOP package for the 256-Mbit devices, Mitsubishi Electric now offers sTSOP packages for its complete line of 64-, 128-, and 256-Mbit SDR SDRAMs, plus 256-Mbit DDR SDRAMs.

The 256-Mbit DDR and SDR SDRAMs are available in 64-megaword x 4-bit (64M x 4), 32M x 8, and 16M x 16 organizations, with a bonding option. The x4 organizations are ideal for employing system-level error correction code (ECC) detection and correction with “chip-kill”protection in server, workstation, networking, and communications system applications. The 256-Mbit devices offer column address strobe latencies (CL) as low as CL 2 for DDR266 and PC133 speed grades. A PC166 speed grade is also available for the SDR version.

Mitsubishi Electric's 256-Mbit DDR SDRAM can achieve a peak data transfer rate of 2.1 Gbytes per second at a clock frequency of 133 MHz -- or 266 Mbits per second per data pin -- when used with a 64-bit bus. This results from the synchronization of data input and output with the rising and the falling edges of each clock cycle, as well as through using a bidirectional data strobe that is synchronized to the source of each high-speed signal used. Another key reason why DDR SDRAMs achieve a higher speed is because they use the JEDEC-standard stub series terminated logic for 2.5 volts (SSTL_2) interface.

Packaging and Availability

The 256-Mbit devices are available in an ultra-compact, 64-pin sTSOP package and a JEDEC-standard, 66-pin TSOP II package for the DDR version; as well as a 64-pin sTSOP package and a 54-pin TSOP II package for the SDR version.

Samples of the 256-Mbit DDR and SDR SDRAMs will be available in October 2001, with volume production scheduled for the fourth quarter of 2001.

Product Numbers

The 256-Mbit DDR SDRAMs are available in the following product numbers:

· DDR, 64M x 4, sTSOP package -- M2S56D20AKT
· DDR, 32M x 8, sTSOP package -- M2S56D30AKT
· DDR, 16M x 16, sTSOP package -- M2S56D40AKT
· DDR, 64M x 4, TSOP II package -- M2S56D20ATP
· DDR, 32M x 8, TSOP II package -- M2S56D30ATP
· DDR, 16M x 16, TSOP II package -- M2S56D40ATP

The 256-Mbit SDR SDRAMs are available in the following product numbers:

· SDR, 64M x 4, sTSOP package -- M2V56S20AKT
· SDR, 32M x 8, sTSOP package -- M2V56S30AKT
· SDR, 16M x 16, sTSOP package -- M2V56S40AKT
· SDR, 64M x 4, TSOP II package -- M2V56S20ATP
· SDR, 32M x 8, TSOP II package -- M2V56S30ATP
· SDR, 16M x 16, TSOP II package -- M2V56S40ATP

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About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation is one of the world's top-10 DRAM suppliers and aggressively develops advanced DRAMs, such as DDR and SDR SDRAMs, RDRAM®, and other emerging industry-standard DRAM types to support current and future customer requirements. Mitsubishi Electric is the first company to successfully integrate the process technologies of DRAM and processor logic with its highly acclaimed eRAM™ system integration technology, and has shipped embedded DRAM products in high volume for longer than any other supplier. eRAM is Mitsubishi Electric's brand name for its silicon process technology, products, and systems expertise that integrate memory and system-level core functions on the same integrated circuit to enable unprecedented overall system performance.
   A top-tier semiconductor supplier, Mitsubishi Electric markets memory products and an extensive range of other semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc. Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Trademark Information
eRAM is a trademark of Mitsubishi Electric & Electronics USA, Inc. RDRAM is a registered trademark of Rambus Inc. All other companies and products referenced herein are trademarks or registered trademarks of their respective holders.

Keywords
Mitsubishi, DDR, SDRAM, Synchronous DRAM, DRAM, DDR266, DDR200, PC166, PC133.

Editorial Contacts:

Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com

Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com