Mitsubishi Electric's Leading-Edge,
0.15µmm, 512-Mbit
DDR and SDR SDRAMs Offer Greater Density
for High-End Servers and Workstations
SUNNYVALE, Calif.--August 28, 2001--The Electronic Device
Group of Mitsubishi Electric & Electronics USA, Inc., today announced
the sample availability of 0.15-mm, 512-Mbit double-data-rate (DDR)
and single-data-rate (SDR) synchronous DRAMs (SDRAMs) for high-end
server and workstation, and notebook and desktop computer applications.
Speed grades available include DDR266 and DDR200 for the DDR devices,
as well as PC133 for the SDR devices. A leading-edge 0.15-mm CMOS
process technology enables the 512-Mbit devices to fit in a standard
TSOP Type II package.
“Mitsubishi Electric's move to the 0.15-mm process technology
gives our customers the next density level for our DDR and SDR SDRAM
product lines,” said Cecil Conkle, assistant vice president
of DRAM marketing at Mitsubishi Electric & Electronics USA, Inc.
“Mitsubishi Electric pioneered manufacturing DDR and SDR SDRAMs
on the same die with a metal mask option, and these new devices
make use of the same technique to drive down manufacturing costs
and improve manufacturing flexibility for our customers' benefit.
This is especially important at the 512-Mbit density, in which DDR
will dominate but some SDR requirements must be supported, too.”
The 512-Mbit DDR SDRAM is available in 128-megaword x 4-bit (128M
x 4) and 64M x 8 organizations, with a bonding option. The 512-Mbit
SDR SDRAMs are available in x4, x8, and x16 organizations, with
a bonding option. The x4 organizations are ideal for employing system-level
error correction code (ECC) detection and correction with “chip-kill“
protection in server, workstation, networking, and communications
system applications.
Mitsubishi Electric's 512-Mbit DDR SDRAMs can achieve a peak data
transfer rate of 2.1 Gbytes per second at a clock frequency of 133
MHz -- or 266 Mbits per second per data pin -- when used
with a 64-bit bus. This results from the synchronization of data
input and output with the rising and the falling edges of each clock
cycle, as well as through using a bidirectional data strobe that
is synchronized to the source of each high-speed signal used. Another
key reason why DDR SDRAMs achieve a higher speed is because they
use the JEDEC-standard stub series terminated logic for 2.5 volts
(SSTL_2) interface.
Packaging and Availability
The 512-Mbit devices are offered in a JEDEC-standard, 400-mil,
66-pin TSOP II package for the DDR version; and a 400-mil, 54-pin
TSOP II package for the SDR version.
Samples of the 512-Mbit DDR and SDR SDRAMs will be available in
November 2001, with volume production scheduled for the first quarter
of 2002.
Product Numbers
The 512-Mbit DDR SDRAMs will be available in the following product
numbers:
· 128M x 4 organization -- M2S12D20TP
· 64M x 8 organization -- M2S12D30TP
The 512-Mbit SDR SDRAMs will be available in the following product
numbers:
· 128M x 4 organization -- M2V12S20TP
· 64M x 8 organization -- M2V12S30TP
· 32M x 16 organization -- M2V12S40TP
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About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation is one of the world's top-10 DRAM
suppliers and aggressively develops advanced DRAMs, such as DDR
and SDR SDRAMs, RDRAM®, and other emerging industry-standard
DRAM types to support current and future customer requirements.
Mitsubishi Electric is the first company to successfully integrate
the process technologies of DRAM and processor logic with its highly
acclaimed eRAM™ system integration technology, and has
shipped embedded DRAM products in high volume for longer than any
other supplier. eRAM is Mitsubishi Electric's brand name
for its silicon process technology, products, and systems expertise
that integrate memory and system-level core functions on the same
integrated circuit to enable unprecedented overall system performance.
A top-tier semiconductor supplier, Mitsubishi
Electric markets memory products and an extensive range of other
semiconductors in North America through the Electronic Device Group
of Mitsubishi Electric & Electronics USA, Inc. Additional information
on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.
Trademark Information
eRAM is a trademark of Mitsubishi Electric & Electronics
USA, Inc. RDRAM is a registered trademark of Rambus Inc. All other
companies and products referenced herein are trademarks or registered
trademarks of their respective holders.
Keywords
Mitsubishi, DDR, SDRAM, Synchronous DRAM, DRAM, DDR266, DDR200,
PC166, PC133.
Editorial Contacts:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com
Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com
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