Continues Roll-Out of Highly Efficient Broadband Modules
for VHF, UHF and 800-MHz Applications

SUNNYVALE, Calif. -- May 15, 2002 --As part of Mitsubishi Electric's new radio frequency (RF) product strategy to deliver higher performance, lower design costs and reduced designer time-to-market, the company introduced the RA45H4452M, a UHF-band, 45-watt, RF power module for mobile communications.

The RA45H4452M, manufactured in 0.5-µm MOSFET process technology, meets wider bandwidth demand from the mobile radio market with its new wideband-matching technology. Incorporating a negative feedback circuit and a multi-stage matching circuit, this new wideband matching technology enables increased wideband performance of 440-520 megahertz (MHz) from the previous generation's range of 440-490 MHz.

Mitsubishi Electric offers a complete range of low-power and high-power transistors and modules for VHF, UHF and 800-MHz applications. In October 2001, the company introduced a new second-generation MOSFET process technology for this product line, and this latest device is part of a continuing series of new products using this technology. The new process technology has enabled Mitsubishi Electric to begin consolidation of its VHF, UHF and 800-MHz product line from 350 modules and 75 transistors to approximately 40 modules and 20 transistors. To date, Mitsubishi Electric has introduced more than 30 new devices that offer customers wider coverage per device, higher efficiency and better stability than the previous generation of bipolar products.

"The RA45H4452M is part of this continuing series of MOSFET products that give customers greater engineering flexibility while substantially reducing their product development time and costs," said Bryon Gutow, senior product marketing manager for microwave and RF products at Mitsubishi Electric & Electronics USA, Inc. "We are able to consolidate our RF product line through the adoption of new technologies combined with intelligent innovation, delivering a high-quality line of products for 100-MHz to 1-GHz device applications."

The RA45H4452M features an improved high-gain performance of 28 decibels (dB) that in turn results in a reduced input power requirement. Additionally, the MOSFET device is voltage controlled, eliminating the need for the current amplifier in the auto power control (APC) circuit. This results in fewer components, saving space and cost, and allows the APC current to be reduced from 200 milliamps (mA) to less than 1 mA, further reducing power requirements.

Availability
The RA45H4452M UHF-Band power module is available in samples.

About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise, and high-power communications applications, including satellite and terrestrial transmitters and receivers, mobile radios, cellular phones, and subscriber units. The company produces gallium-arsenide (GaAs) FETs, modules, and MMICs using HBT, PHEMT, MESFET, HEMT, and HFET technologies. The company also produces silicon RF power transistors and modules using MOS and LDMOS technologies for the industrial and consumer markets. Mitsubishi Electric markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.
Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Keywords
Mitsubishi, RF, module, transistor, UHF, VHF, discrete, MOSFET, mobile communication.

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