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MITSUBISHI ELECTRIC ANNOUNCES 980-NM PUMP LASER DIODE THAT
ACHIEVES 1,100 MILLIWATTS PEAK POWER OUTPUT
Achieves High-Output Performance Through Window Structure
Technology That Prevents Catastrophic Optical Damage
SUNNYVALE, Calif. --
September 10, 2002 -- The Electronic
Device Group of Mitsubishi Electric & Electronics USA, Inc.,
today introduced two 980-nm ridge-wavelength pump laser diodes with
technological breakthroughs. The ML861E5S laser diode achieves an
ultra-high peak power output of 1,100 milliwatts (mW) without the
danger of catastrophic optical damage (COD) for dense wavelength
division multiplexing (DWDM) applications. The uncooled ML8627S
laser diode offers an exceptionally stable wavelength in metropolitan
area network applications throughout a wide operating temperature
range. Both diodes are used as a pumping source for erbium doped
fiber amplifiers (EDFAs).
"These pump laser diodes offer customers significant performance
advancements," said Daniel Chen, assistant vice president of
high-frequency products for Mitsubishi Electric & Electronics
USA, Inc. "The ML861E5S offers an extremely high peak power
output with a small laser beam aspect ratio for more effective long-distance
DWDM applications. The uncooled ML8627S delivers exceptional wavelength
stability in a cost-effective way for metropolitan area networks."
ML861E5S Pump Laser Diode
The ML861E5S pump laser diode achieves a 1,100-mW peak and 750-mW
kink-level power output through an innovative window structure developed
from quantum-well mixing using silicon-ion implantation. The window
structure avoids COD damage because it does not absorb the light
power output. The structure also reduces the laser beam's aspect
ratio to less than 2.5, enabling a more efficient coupling between
the laser and optical fiber. The ML861E5S pump laser diode offers
an exceptionally high typical operating power output of 500 mW and
a reflectivity of less than 1 percent.
ML8627S Pump Laser Diode
The ML8627S pump laser diode uses facet coatings to stabilize
the wavelength over a wide temperature range (5 to 85 degrees Celsius).
This technology enables the device to achieve 20 percent less wavelength
change than traditional 980-nm pump laser diodes. Facet coatings
also offer a significant cost advantage over the fiber gratings
traditionally used in pump laser diode modules for long-reach and
submarine-cable communication networks. With the ML8627S pump laser
diode being an uncooled device, customers save module space and
reduce system cost because a thermal controller is unnecessary
Technical paper presentations on the base technologies used in the
ML861E5S and ML8627S pump laser diodes will be presented this week
at the European Conference on Optical Communication (ECOC 2002)
in Copenhagen, Denmark.
Packaging and Availability
The ML861E5S pump laser diode is available in a TO-CAN package or
chip-on-carrier.
Samples of the ML861E5S are available now, with volume production
scheduled for January 2003. Samples of the ML8627S pump laser diode
will be available in January 2003.
M861E5S Specifications
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Output Power: 500 mW (typical at 25 degrees
C) |
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Threshold Current: 110 mA (typical at 25 degrees
C) |
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Reflectivity: Less than 1% |
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Laser Beam Divergence: 8 degrees parallel;
19 degrees perpendicular |
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Aspect ratio: Less than 2.5 |
M8627S Specifications
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Output Power: 200 mW (typical at 25 degrees
C) |
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Threshold Current: 70 mA (typical at 25 degrees
C) |
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Wavelength Stability: 980 +/- 10 nm (0-200
mW; 0-70 degrees C) |
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Laser Beam Divergence: 8 degrees parallel;
19 degrees perpendicular |
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Aspect ratio: Less than 2.5 |
# # #
About Mitsubishi Electric & Electronics USA,
Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic
products for SDH, SONET, CWDM, DWDM, data communication, and FITL
applications, as well as passive optical network systems, test and
instrumentation applications, and CATV distribution. The company
markets its optoelectronic products in North America through the
Electronic Device Group of Mitsubishi Electric & Electronics
USA, Inc.
Mitsubishi Electric Corporation and its North American affiliate,
Mitsubishi Electric & Electronics USA, Inc., are world-class
suppliers of semiconductors and electronic products for communications,
industrial, Internet-enabled, automotive, and visual applications.
Mitsubishi Electric combines its systems-level expertise and high-level
silicon process technologies to provide chip, chipset, and system-on-chip
solutions. The company is ranked among the top-tier worldwide semiconductor
suppliers and offers an extensive range of semiconductor and computer
system components for the North American marketplace, including
DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic
devices.
Additional information on the Mitsubishi Electric Semiconductor
Group is available at http://www.mitsubishichips.com/.
Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of
Mitsubishi Electric Corporation in the U.S.A., Japan, and other
countries.
Keywords
Mitsubishi, optoelectronic, 980-nm laser diode, pump laser diode,
ridge wavelength laser diode.
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Editorial Contacts:
Positio Investor & Public Relations
Dave Richardson
(650) 815-1006, Ext. 108
dave@positiopr.com
Mitsubishi Electric & Electronics USA, Inc.
John Garner
(408) 774-3191
garner_john@edg.mea.com
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