SUNNYVALE, Calif. -- January 15, 2003 -- The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today introduced the first two devices in the new MGF095XP power GaAs FET^[1] family. The devices demonstrate exceptional linearity at frequencies from cellular bands through U-NII band (5.725 - 5.825 GHz). They are available in a new low-cost, plastic mold, lead-frame package that improves heat dissipation for enhanced RF performance and reliability. Occupying a tiny 4.5-mm x 3.4-mm footprint, the devices are ideally suited to automated manufacturing environments, such as the reflow process.

"Customers employing complex modulation schemes in their designs will appreciate the outstanding linearity performance and advanced packaging technology characteristics of the MGF095XP family," said Bryon Gutow, senior product marketing manager for microwave and RF products at Mitsubishi Electric & Electronics USA, Inc. "Additionally, the low-cost nature of these devices make them a good fit for applications as diverse as wireless LANs, receiver amplifiers, and tower-top antennas, as well as the driver and output stages in basestation transmitters."

Both power GaAs FET devices feature IM3^[2] performance of -45 dBc with 50 percent power added efficiency. The IP3^[3] performance is 42 dBm for the MGF0951P device and 47.5 dBm for the MGF0952P device.

Technology improvements in the MGF095XP family improve the power output, gain, and reliability of the devices. The MGF0951P offers +31 dBm of output power with 13 dB of gain (at 2.15 GHz) and a thermal resistance of 20 degrees C per watt. The MGF0952P has +36.5 dBm of output power with 13.5 dB of gain (at 2.15 GHz) and a thermal resistance of 5 degrees C per watt.

Availability
Samples are now available for the MGF0951P and MGF0952P devices, with volume production scheduled for April 2003.

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Definitions:
[1] GaAs FET --gallium arsenide field effect transistor
[2] IM3 -- Abbreviation for third-order intermodulation distortion products resulting from non-linear behavior of a semiconductor device.
[3] IP3 -- Abbreviation for third-order intercept point. Related to the output power and IM3. Measure of semiconductor device linearity.


About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise, and high-power communications applications, including satellite and terrestrial transmitters and receivers, mobile radios, cellular phones, and subscriber units. The company produces gallium-arsenide (GaAs) FETs, modules, and MMICs using HBT, PHEMT, MESFET, HEMT, and HFET technologies. The company also produces silicon RF power transistors and modules using MOS and LDMOS technologies for the industrial and consumer markets. Mitsubishi Electric markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including DRAM, flash, SRAM, ASIC, ASSP, MCU, microwave/RF, and optoelectronic devices.
Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.


Keywords
Mitsubishi, GaAs FET, PCS, GSM, CDMA, TDMA, W-CDMA, U-NII, MMDS, ITFS, AMPS, SMD, SMT, fixed wireless, microwave, RF, radio frequency.

 

Editorial Contacts: Positio Investor & Public Relations Dave Richardson (650) 815-1006, Ext. 108 dave@positiopr.com Mitsubishi Electric & Electronics USA, Inc. John Garner (408) 774-3191 garner_john@edg.mea.com

Customer Contact: (408) 774-3189 customerservice@edg.mea.com