SUNNYVALE, Calif. -- March 10, 2003 -- The Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc., today announced the new ML0xx18 family of Electroabsorption (EA) Modulator Driver ICs for 10-gigabit-per-second (10-Gbps) transponders, transceivers, and other modules designed to conform to all types of multi-source agreements. The new family offers world-class sensitivity, requiring an input of only 0.1 volt (V) to generate the 3.0V output necessary to drive an EA modulator. It also enables designers to use a highly integrated CMOS-based IC in the module's previous stage, reducing the size, power consumption, and manufacturing cost of 10-Gbps optical modules and transmission systems.

"As 10-Gbps data and telecommunications networks gain more widespread adoption, customers are faced with greater pressure to cut module costs wherever possible without compromising system performance," said Daniel Chen, assistant vice president of optoelectronic and high-frequency products for Mitsubishi Electric & Electronics USA, Inc. "Using CMOS-based components enables optical module manufacturers to integrate many formerly separate components into one IC, greatly reducing module size, power consumption, and costs. However, when operating at high speeds, CMOS-based ICs generate an insufficient output signal to adequately drive a previous-generation EA modulator driver IC. Our EA Modulator Driver ICs bridge this gap by providing exceptional input sensitivity along with high output performance, stability, and reliability."

Designed using Mitsubishi Electric's proprietary InGaP HBT^[1] process technology and exceptional high-frequency circuit design techniques, the ML0xx18 EA Modulator Driver IC family is capable of offering two to four times the sensitivity of SiGe^[2] process technology alternatives. The InGaP HBT process technology also has greater reliability than AlGaAs^[3] process technology while maintaining the same high-voltage characteristics, enabling the high current density operation necessary for 10-Gbps performance. The ML0xx18 family remains stable even after changing the bias voltage.

The family features a built-in flip-flop for data re-timing, which enables modules to transmit high-quality output waveforms with low jitter. A 50-ohm terminating resistor in the output section prevents the output waveform deterioration caused by multipath reflection between the driver IC and light elements. The ML0xx18 also contains crosspoint control, output voltage modulation, and offset adjustments so designers can tune it for the most desirable optical output waveforms for extending the module's transmission reach.

Using a single, -5.2V power supply, the device makes obsolete the need for voltage conversion circuits inside the optical module, enabling further space reduction and lower costs. Power consumption can be reduced up to 1.5 watts when using the data re-timing operation and up to 1.3 watts without it.

The ML0xx18 is available as die (ML0CP18) and in a 32-pin plastic-molded SLP^[4] package (ML01618) with a 5-mm x 5-mm footprint, so optical module manufacturers can choose the type better suited to their design requirements.

Availability

ML0xx18 samples will be available in April 2003, with volume production scheduled for the fourth quarter of 2003.

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Definitions
[1] InGaP HBT --indium gallium phosphide hetro-junction bipolar transistor
[2] SiGe -- silicon germanium
[3] AlGaAs -- aluminum gallium arsenide
[4] SLP -- small leadframe plastic package

About Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation offers a diverse range of optoelectronic products for SDH, SONET, 10-GbE, CWDM, DWDM, data communication, and OTDR applications, as well as passive optical network systems, test and instrumentation applications, and CATV distribution. The company's optoelectronic product families conform to leading-edge current and future multi-source agreements such as XENPAK, X2, XPAK, and XFP. Mitsubishi Electric markets its optoelectronic products in North America through the Electronic Device Group of Mitsubishi Electric & Electronics USA, Inc.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electric & Electronics USA, Inc., are world-class suppliers of semiconductors and electronic products for communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi Electric combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset, and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including microcontroller, ASSP, ASIC, flash, SRAM, DRAM, optoelectronic, and microwave/RF devices.
Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Trademark Information
Mitsubishi and the Mitsubishi logo are registered trademarks of Mitsubishi Electric Corporation in the U.S.A., Japan, and other countries.

Keywords
Mitsubishi, optoelectronic, EA Modulator Driver, 10 gigabit per second, 10 Gbps, 10 Gb/s, 10-Gigabit Ethernet, 10-GbE, 10GbE, 10-Gigabit, XENPAK, X2, XPAK, XFP, SONET, SDH, Fiber Channel.

 

Editorial Contacts: Positio Investor & Public Relations Dave Richardson (650) 815-1006, Ext. 108 dave@positiopr.com Mitsubishi Electric & Electronics USA, Inc. John Garner (408) 774-3191 garner_john@edg.mea.com

Customer Contact: (408) 774-3189 customerservice@edg.mea.com